J426 monolithic dual n-channel JFET

J426 monolithic dual n-channel JFET

monolithic dual H n-channel JFETs Performance Curves NQT See Sedion 4 designed for • • • • Very High Input Impedance DiHerential Amplifiers Electrometers • Impedance Converters BENEFITS • High Input Impedance IG = 0.1 pA Maximum (U421-3) • High Gain gfs = 140 !,mho Minimum@ ID= 3O I'A (U421·3) •.

Features

3 U424-6 Unit Min Typ Mox Min Typ Mox Test Conditions 1 I- 2 1- 3S T I-A 4T 1 15 c 16 1---;- BVGSS BVGlG2 IGSS IG VGS(off) VGS lOSS Gate-Source Breakdown Voltage Gate-Gate Breakdown Voltage Gate Reverse Current (Note 1) Gate Operating Current (Note 1) Gate-Source Cutoff Voltage Gate
·Source Voltage Saturation Drain Current -40 -60 -40 -60 v ±40 ±40 0.2 1.0 pA 0.5 1.0 oA 0.1 0.5 100 500 pA -0.4 -2.0 -0.4 -3.0 V -1.8 -2.9 60 1000 60 800 "A IG"'-lp.A,VDS=O IG '" -1 J..IA, ID '" 0, IS'" 0 T - +25°C T-+125 C T - +25°C T - +125°C VGS=-20V, VDS=O VOG '" lOV, 'D '" 30J..