OP236TXV Datasheet

OP236TXV High Reliability Hermetic Infrared Emitting Diode

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 .

Features

• TO-46 hermetically sealed package with lens
• Twice the power output of GaAs at same drive current
• Characterized to define infrared energy along mechanical axis of device
• Narrow beam angle
• Processed to MIL-PRF-19500 Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon.