DMD1029 |
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| Part Number | DMD1029 |
| Manufacturer | Seme LAB |
| Description | TetraFET DMD1029 DMD1029-A METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE ... |
| Features |
• SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS • ULTRA-LOW THERMAL RESISTANCE • BeO FREE • LOW Crss • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 875W (438W -A Version) BVDSS Drain – Source Breakdown Voltage * 70V BVGSS Gate – Source Breakdown Voltage* ±20V ID(sat) Drain Current* 35A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab Plc reserves the right to change test condition... |
| Datasheet |
 DMD1029 Data Sheet
PDF 88.09KB |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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