DMD1010 |
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| Part Number | DMD1010 |
| Manufacturer | Seme LAB |
| Description | TetraFET DMD1010 DMD1010-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DR... |
| Features |
• SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS • ULTRA-LOW THERMAL RESISTANCE • BeO FREE • LOW Crss • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage* Drain Current* Storage Temperature Maximum Operating Junction Temperature 648W (389W -A Version) 70V ±20V 20A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished ... |
| Document |
 DMD1010 Data Sheet
PDF 81.42KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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