D2016UK METAL GATE RF SILICON FET

D2016UK METAL GATE RF SILICON FET

TetraFET D2016UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C2 3 1 5 4 G (4 pls) F K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 PIN 4 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 117W BVDSS Drain
  – Source Breakdown Voltage * 65V BVGSS Gate
  – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 6A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab Plc reserves the right to change test conditions, parameter.