NP6601AMR |
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| Part Number | NP6601AMR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and... |
| Features |
N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel： VDS =-30V，ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V RDS(ON)=68.5mΩ (typical) @ VGS=-2.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Marking and pin assignment Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification Package SOT-23-6L Ordering Information Part Number NP6601AMR-G Storage Temperature -55°C to +150°C Package SOT-... |
| Datasheet |
 NP6601AMR Data Sheet
PDF 861.45KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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natlinear |
N And P-Channel Enhancement Mode MOSFET |
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natlinear |
20V N And P-Channel Enhancement Mode MOSFET |
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natlinear |
N And P-Channel Enhancement Mode MOSFET |
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natlinear |
N And P-Channel Enhancement Mode MOSFET |
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natlinear |
N And P-Channel Enhancement Mode MOSFET |
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natlinear |
60V N-Channel Enhancement Mode MOSFET |
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natlinear |
60V N-Channel Enhancement Mode MOSFET |
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natlinear |
60V N-Channel Enhancement Mode MOSFET |
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Renesas |
MOS FIELD EFFECT TRANSISTOR |
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Renesas |
N-CHANNEL POWER MOS FET |
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Renesas |
N-Channel MOSFET |
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Renesas |
N-Channel Power MOSFET |
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