NP2301AVR 20V P-Channel Enhancement Mode MOSFET

NP2301AVR 20V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP2301AVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-20V，ID =-2.8A RDS(ON)(Typ.)=80mΩ @VGS=-2.

Features

 VDS =-20V，ID =-2.8A RDS(ON)(Typ.)=80mΩ @VGS=-2.5V RDS(ON)(Typ.)=64mΩ @VGS=-4.5V
 High power and current handing capability
 Lead free product is acquired
 Surface mount package Marking and pin assignment SOT-23 (Topview) Application
 PWM applications
 Load switch Package
 SOT-23 Ordering Information Part Number NP2301AVR-G Storage Temperature -55°C to +150°C Package SOT-23 Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Drain-source Diode forward curre.