SPP80N08S2-07 Datasheet

SPP80N08S2-07 N-Channel MOSFET

SPP80N08S2-07-VB SPP80N08S2-07-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 7 mΩ 9 mΩ 100 A Single TO-220AB FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • S.

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
• LED Backlighting www.VBsemi.com D G Top View GD S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Tempe.