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AOT8B65M3 |
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| Part Number | AOT8B65M3 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Latest AlphaIGBT (αIGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies ... |
| Features |
Collector Current, Limited by TJmax
ICM
24
A
Turn off SOA, VCE≤650V, Limited by TJmax
ILM
24
A
Continuous Diode Forward Current
TC=25°C TC=100°C
IF
10
A
5
Diode Pulsed Current, Limited by TJmax
IFM
15
A
Short Circuit Withstanding Time (1) VGE=15V, VCC≤400V, TJ≤175°C
tSC
5
ms
Power Dissipation
TC=25°C TC=100°C
PD
83 W
42
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol
AOT8B65M3
Units
Maximum Junction-to-Ambient
RqJ... |
| Document |
 AOT8B65M3 Data Sheet
PDF 584.95KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
9A N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
8A N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
8A N-Channel MOSFET |
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Alpha & Omega Semiconductors |
7.4A N-Channel MOSFET |
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Alpha & Omega Semiconductors |
N-Channel Power Transistor |
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ETC |
AOT101 |
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Alpha & Omega Semiconductors |
10A IGBT |
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