AOB11S65L 650V 11A Power Transistor

AOB11S65L 650V 11A Power Transistor

Product Summary The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalan.

Features

urrent C IAR 2 Repetitive avalanche energy C EAR 60 Single pulsed avalanche energy G EAS 120 TC=25°C Power Dissipation B Derate above 25oC PD 198 39 1.6 0.31 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT11S65L/AOB11S65L 65 0.5 AOTF11S65 65 -- Maximum Junction-to-Case RqJC 0.63 3.25 * Drain cur.