AOTF11S65L |
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| Part Number | AOTF11S65L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robu... |
| Features |
urrent C
IAR
2
Repetitive avalanche energy C
EAR
60
Single pulsed avalanche energy G
EAS
120
TC=25°C Power Dissipation B Derate above 25oC
PD
198
39
1.6
0.31
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
100 20
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RqJA RqCS
AOT11S65L/AOB11S65L 65 0.5
AOTF11S65 65 --
Maximum Junction-to-Case
RqJC
0.63
3.25
* Drain cur... |
| Datasheet |
 AOTF11S65L Data Sheet
PDF 575.74KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Alpha & Omega Semiconductors |
650V 11A Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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Freescale |
Power Transistor |
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Alpha & Omega Semiconductors |
Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
Power Transistor |
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Alpha & Omega Semiconductors |
Power Transistor |
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Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
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Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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