MDP10N027 Single N-channel Trench MOSFET

MDP10N027 Single N-channel Trench MOSFET

Features The MDP10N027 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC conver.

Features

The MDP10N027 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.  VDS = 100V  ID = 120A @VGS = 10V  Very low on-resistance RDS(ON) < 2.8 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D G D S TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pu.