MBQ40T120FDS High speed FieldStop Trench IGBT

MBQ40T120FDS High speed FieldStop Trench IGBT

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 Features  High Speed Switching & Low Power Loss  VCE(sat) = 2.0V @ IC = 40.

Features

 High Speed Switching & Low Power Loss
 VCE(sat) = 2.0V @ IC = 40A
 High Input Impedance
 trr = 100ns (typ.) Applications
 PFC
 UPS
 Inverter G C E Absolute Maximum Ratings Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Pulsed collector current, pulse time limited by Tjmax Diode forward current @ TC = 100°C Diode pulsed current, Pulse time limited by Tjmax Power dissipation Short circuit withstand time VCE = 600V, VGE = 15V, TC = 150°C Allowed number of short circuit < 1000 Time between short circuits ≥ 1.0s Operating Junction and storage temperature.