IRFP260M |
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| Part Number | IRFP260M |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. T... |
| Features |
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in ... |
| Datasheet |
 IRFP260M Data Sheet
PDF 1.10MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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IXYS Corporation |
Standard Power MOSFET |
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Vishay Siliconix |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Infineon |
IR MOSFET |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
HEXFET Power MOSFET |
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