NTBG025N065SC1 SiC MOSFET

NTBG025N065SC1 SiC MOSFET

Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Complia.

Features

• Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 164 nC)
• Low Output Capacitance (Coss = 278 pF)
• 100% Avalanche Tested
• TJ = 175°C
• RoHS Compliant Typical Applications
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Power Supplies)
• Energy Storage MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate − Source Voltage VDSS 650 V VGS −8/+22 V TC < 175°C VGSop −5/+18 V Continuous Drain .