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 DataSheet (1.24MB)
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The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNP.
• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
• 650 V enhancement mode power transistor
• Bottom-cooled, low inductance GaNPX® package
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 PCB footprint
• Dual gate pads for optimal board layout
• RoHS 3 (6+4) compliant
Package Outline
top view
Circuit Symbol
The thermal pad is internally .
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GaN Systems |
Automotive 650V GaN E-mode transistor |
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GaN Systems |
650V E-mode GaN transistor |
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GaN Systems |
700V E-mode GaN transistor |
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GaN Systems |
650V E-mode GaN transistor |
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GaN Systems |
700V E-mode GaN transistor |
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GaN Systems |
650V E-mode GaN transistor |
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GaN Systems |
650V E-mode GaN transistor |
|
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GaN Systems |
700V E-mode GaN transistor |
|
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GaN Systems |
700V E-mode GaN transistor |
|
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|
|
GaN Systems |
700V E-mode GaN transistor |
|
|
|
|
GaN Systems |
700V E-mode GaN transistor |
|
|
|
|
GaN Systems |
650V E-mode GaN transistor |
|
|
|
|
GaN Systems |
650V E-mode GaN transistor |
|
|
|
|
GaN Systems |
700V E-mode GaN transistor |
|
|
|
|
GaN Systems |
700V E-mode GaN transistor |
|