2N5912 |
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Part Number | 2N5912 |
Manufacturer | Solitron Devices |
Description | The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for mi... |
Features |
LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL
DESCRIPTION
The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory.
Source
Case
5 6 Drain
Gate 3
Drain 2
1
Source
7 Gate
Bottom View
ORDERING GUIDE
Part Number 2N5911, 2N5912 Description -25V Dual Match... |
Datasheet |
2N5912 Data Sheet
PDF 105.94KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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ETC |
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Central Semiconductor Corp |
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Calogic LLC |
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Micross |
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Siliconix |
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Solitron Devices |
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National Semiconductor |
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Calogic LLC |
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Micross |
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Siliconix |
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National Semiconductor |
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Micross |
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