SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . F S1806 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. LOW FREQUENCY, MEDIUM POWER AMPLIFIERSDRIVER STAGE AMPLIFIERS. FEATIT?ES: . Excellent h FE vs. Collector Current Chara.
h FE(2) VCE(sat) VCE =1V, I c =-50mA VCE =-1V, I c =-400mA I c =-100mA, T B =-5mA vBE(sat) I C =-100mA, I B =-5mA Base-Emitter Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VBE Vce=-1V, I c =-50mA v (BR) CBO l"C=-0.1mA, I E =0 v (BR) CEO I C =-lmA, I B =0 Collector Cut-off Current Emitter Cut-off Current : CB0 r EB0 VCB— 35V, IE =0 VEB =-5V, I C =0 MIN. TYP 70 _ 23 - RAX. 240 _ UNIT - - -0.25 V - - -1.2 V -0.65 -0.72 -0.80 V -40 - _ V -30 - - V - - -100 nA - - -100 nA 957- )) S1806 Ic - V CE w 1000 si 500 300 < hpE "- .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | S1805 |
Toshiba |
Silicon NPN Transistor | |
2 | S1807 |
Toshiba |
Silicon NPN Transistor | |
3 | S1808 |
Toshiba |
Silicon PNP Transistor | |
4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH | |
6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH | |
7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH | |
8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH | |
9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors | |
10 | S1812 |
API Delevan |
Shielded Surface Mount Inductors | |
11 | S1836 |
Toshiba |
Silicon NPN Transistor | |
12 | S1837 |
Toshiba |
Silicon PNP Transistor | |
13 | S1838 |
Toshiba |
Silicon NPN Transistor | |
14 | S1839 |
Toshiba |
Silicon PNP Transistor | |
15 | S1840 |
Toshiba |
Silicon NPN Transistor |