TBC338 |
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| Part Number | TBC338 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS ARE TBC327 AND TBC328. FEATURES . High V C EO : ... |
| Features |
. High V C EO : 45V (TBC337)
25V (TBC338) . Low Saturation Voltage
: V CE ( sat )=0.7V
(Max.)
at I C =500mA
Unit in mm
'
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„H 4n o.4 5 z
55 MAX.
a
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00 r-
C.4 5
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MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC337 TBC338
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
TBC337 TBC338
Collector Current
DC Peak
Base Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL V (BR)CBO
v (BR) CEO
V (BR)EBO ic ICP IB PC
Ti
T stg
RATING 50 30 45 25
5
500 1000
100 625 150
-65-150
... |
| Datasheet |
 TBC338 Data Sheet
PDF 34.96KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba |
Silicon NPN Transistor |
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Toshiba |
Silicon PNP Transistor |
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Toshiba |
Silicon PNP Transistor |
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Token Electronics |
Hall Current Sensor |
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Token Electronics |
Hall Current Sensor |
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Siemens |
DUAL OPERATIONAL AMPLIFIER |
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Siemens |
Operational Amplifier |
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Siemens |
DUAL OPERATIONAL AMPLIFIER |
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Token Electronics |
Hall Current Sensor |
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Siemens |
DUAL OPERATIONAL AMPLIFIER |
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Token Electronics |
Hall Current Sensor |
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Token Electronics |
Hall Current Sensor |
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