2N4123 |
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| Part Number | 2N4123 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . ... |
| Features |
. Low Leakage Current
: ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA
. Low Collector Output Capacitance • • Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage Collector Current VEBO 5 ic 200 Base Current IB 50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.8 Collector Power Dissipation (Tc=25°C) Derate Linearly 25°C PC Thermal Reisstance (J... |
| Document |
 2N4123 Data Sheet
PDF 55.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ON Semiconductor |
NPN Transistors |
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Fairchild Semiconductor |
NPN Amplifier |
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Micro Commercial Components |
NPN Transistor |
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Motorola |
NPN Transistor |
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NTE |
Silicon NPN Transistor |
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Central Semiconductor |
SILICON TRANSISTORS |
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NXP |
NPN general purpose transistor |
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Fairchild Semiconductor |
NPN General Purpose Amplifier |
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General Semiconductor |
Small Signal Transistors |
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ON Semiconductor |
NPN Transistor |
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