SPR100N30SG |
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Part Number | SPR100N30SG |
Manufacturer | SeCoS |
Description | The SPR100N30SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.... |
Features |
RDS(on)≦2.1mΩ @VGS=10V RDS(on)≦3.3mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested PR-8PP Package
MARKING
100N30SG
Date Code
REF.
A B C D E F
Millimeter
Min. Max.
4.9
5.1
5.7
5.9
5.95
6.2
1.27 BSC.
0.35 0.49
0.1
0.2
REF.
G H I J K L
Millimeter
Min. Max.
0.8
1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
V... |
Document |
SPR100N30SG Data Sheet
PDF 688.78KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
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SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET |
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SeCoS |
N-Channel Fast Switching MOSFET |
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SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET |
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SeCoS |
N-Channel Fast Switching MOSFET |
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SeCoS |
N-Channel Enhancement Mode Power MOSFET |
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TDI |
(SPR-1-08 / -10) SILICON MULTI-CHANNEL DETECTOR ARRAY |
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