SSE104N10-C N-Ch Enhancement Mode Power MOSFET

SSE104N10-C N-Ch Enhancement Mode Power MOSFET

The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE104N10-C meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function .

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available MARKING 104N10 Date Code 1 ORDER INFORMATION Gate Part Number Type SSE104N10-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.96 10.36 14.7 16 2.74 BSC. 12.7 14.73 1.15 1.82 0.39 1.01 3.56 4.82 REF. H I J K L M Millimeter Min. Max. 2.54 BSC. 2.04 2.92 3.745 REF. 0.356 0.5 5.85 6.85 0.51 1.39 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1, @VGS=10V Pulsed Drain C.