SCG4153 N-Channel Enhancement Mode MOSFET

SCG4153 N-Channel Enhancement Mode MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC .

Features

ge Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating Junction & Storage Temperature Range VDS VGS ID PD ID PD IDM TL TJ, TSTG Rating 10S Steady State 20 ±6 0.88 0.8 0.71 0.64 0.37 0.3 0.23 0.19 0.76 0.69 0.6 0.55 0.27 0.22 0.17 0.14 1.4 260 150, -55~150 Unit V V A W A W A °C °C http://www.SeCoSGmbH.com/ 12-Mar-2013 Rev. A Any changes of specification will not be informed individually. Page 1 o.