SSD29N10J-C SeCoS N-Ch Enhancement Mode Power MOSFET Datasheet. Stock, Price

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SSD29N10J-C

SeCoS
SSD29N10J-C
SSD29N10J-C SSD29N10J-C
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Part Number SSD29N10J-C
Manufacturer SeCoS
Description The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications....
Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current @VGS=10V 1 ID TC=100°C Pulsed Drain Current 4 IDM Total Power Dissipation 3 TC=25°C PD TA=25°C Operating Junction and Storage Temperature Range TJ, TSTG...

Document Datasheet SSD29N10J-C Data Sheet
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