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SSG4957 |
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| Part Number | SSG4957 |
| Manufacturer | SeCoS |
| Description | The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low on-resistance * Simple drive req... |
| Features |
* Low on-resistance * Simple drive requirement * Dual P MOSFET Package
D1 D1 D2 D2 8 765
Date Code
4957SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
123 4 S1 G1 S2 G2
Symbol VDS VGS
ID@TA=25oC ID@TA=70oC
IDM PD@TA=25oC
Tj, Tstg
SOP-8
0.40 0.90
6.20 5.80
0.25
0.19 0.25
o
45 0.375 REF
3.80 4.00
0.35
1.27Typ.
0.100.25
0.49
4.80
5.00
1.35
o
0
1.75
o
8
Dimensions in millimeters
... |
| Document |
 SSG4957 Data Sheet
PDF 428.29KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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SeCoS |
Dual-P Enhancement Mode Power MOSFET |
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SeCoS |
Dual P-Ch Enhancement Mode Power MOSFET |
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SeCoS |
Dual N-Channel Mode Power MOSFET |
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SeCoS |
P-Ch Enhancement Mode Power MOSFET |
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SeCoS |
Dual N-Channel MOSFET |
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SeCoS |
Dual N-Channel MOSFET |
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SeCoS |
Dual N-Channel Mode Power MOSFET |
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SeCoS |
P-Channel MOSFET |
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SeCoS |
Dual-N Enhancement Mode Power MOSFET |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET |
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