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SSG5N06-C Datasheet

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SSG5N06-C File Size : 683.66KB

SSG5N06-C N-Channel Enhancement Mode Power MosFET

The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEA.

Features


 Advanced High Cell Density Trench Technology
 Super Low Gate Charge
 Green Device Available MARKING 5N06   = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. Mounting Pad Layout ORDER INFORMATION Part Number Type SSG5N06-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating.

SSG5N06-C SSG5N06-C SSG5N06-C

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