These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switchi.
e, refer to Section 7. ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source Voltage 1 Drain to Gate Voltage 1 RGS=20kΩ Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s Rating IRF420/422 IRF820/822 MTP2N50 500 500 ±20 -55 to +150 275 Maximum Thermal Characteristics RӨJC RӨJA PD IDM .
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