ART40U120 INSULATED GATE BIPOLAR TRANSISTOR

ART40U120 INSULATED GATE BIPOLAR TRANSISTOR

ART40U120 INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control • Low conduction losses • High switching speed • Tighter parameter distribution VCES=1200 V VCE(on) typ. =3, 0V @VGE =15V, Ic=40A N-channel ABSOLUTE MAXIMUM RATINGS Parameter Collector-to.

Features

• High short circuit rating optimized for motor control
• Low conduction losses
• High switching speed
• Tighter parameter distribution VCES=1200 V VCE(on) typ. =3, 0V @VGE =15V, Ic=40A N-channel ABSOLUTE MAXIMUM RATINGS Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current 1 Clamped Inductive Load Current 2 Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Gate
  –to-Emitter Voltage Operating Junction and Storage temperature Range Soldering Temperature, for 10 seconds Symbol VCES IC @ Tc=25˚C I.