2SC1625 Silicon NPN Transistor

2SC1625 Silicon NPN Transistor

2SC1 624' 2SC1 625, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-.

Features

High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC16 24 2SC1625 CollectorEmi tter Voltage 2SC16 24 2SC16 25 Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL RATING 120 V CBO 100 120 V CEO 100 v EBO 5 In 1 IE -1 ?C 15 T J T stg 150 -55^150 UNIT V V 1. BASE V 2. COLLECTOR (HEAT SINK) A 3. EMITTER A JEDEC W T0-22.