SSD50N10-C SeCoS N-Ch Enhancement Mode Power MOSFET

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SSD50N10-C

SeCoS
SSD50N10-C
SSD50N10-C SSD50N10-C
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Part Number SSD50N10-C
Manufacturer SeCoS
Description The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. ...
Features
 Advanced High Cell Density Trench Technology
 Super Low Gate Charge
 Excellent CdV/dt Effect Decline
 100% EAS Guaranteed
 Green Device Available MARKING 50N10   = Date Code TO-252(D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD50N10-C Lead (Pb)-free and Halogen-free  Gate  Drain
 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current @VGS=10V 1 ID TC=100°C Pulsed Drain Curre...

Document Datasheet SSD50N10-C Data Sheet
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