Document | DataSheet (702.83KB) |
The SPR118N06S-C is the highest performance N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous rectification applications. The SPR118N06S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATU.
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
MARKING
PR-8PP
118N06S
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SPR118N06S-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current 1 @VGS=10V
ID
TC=100°C
Pulsed Drain Current 2
IDM
Total Power Dissipation 3
TC=25°C
PD
Operati.
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