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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC400 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 053 MAX. FEATURES . High Transition Frequency : fx=30GMHz (Typ.) . Low Collector Output Capacitance : C ^=4pF (Typ .) . Low Saturation .
. High Transition Frequency : fx=30GMHz (Typ.) . Low Collector Output Capacitance : C ^=4pF (Typ .) . Low Saturation Voltage : V CE ( sat )=0.15V (Typ.) at I c=10mA, I B=lmA . High Switching Speed : t s tg=300ns (Typ.) 04.95 MAX. 1" ~ ri| l l r 00.4 5 r < a in d aH' . Complementary to 2SA500. 02 2 3 j MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage Emitter Base Voltage VCEO VEBO 20 V 5 V 1. EMITTER Collector Current Base Current ic 100 mA 2. BASE IB 20 mA 3. COLLECTOR ( CASE) Collect Power Diss.
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