IMLT65R020M2H SiC MOSFET

IMLT65R020M2H SiC MOSFET

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Features

• Ultra‑low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
• Flexible driving voltage and compatible with bipolar driving scheme
• Robust body diode operation under hard commutation events
• .XT interconnection technology for best‑in‑class thermal performance Benefits
• Enables high efficiency and high power density designs
• Facilitates great ease of use and integration
• Provides the best price performance ratio compared to Industry’s most ambitious roadmaps
• Reduces the size, weight and bill of mat.