P50N02LS Datasheet

P50N02LS N-Channel MOSFET

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N02LS TO-263 (D2PAK) PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12mΩ ID 55A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Vo.

Features

°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C LIMITS UNIT MIN TYP MAX 25 V 0.8 1.2 2.5 ±250 nA 25 µA 250 1 MAY-24-2001 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N02LS TO-263 (D2PAK) On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON.