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Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered produ.
TA=25oC TA=70oC PD 1.25 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 150 Units oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2309P_A Analog Power AM2309P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Fo.
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AiT Semiconductor |
60V 2A P-CHANNEL ADVANCED POWER MOSFET |
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AXElite |
N-Channel Enhancement Mode MOSFET |
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AiT Semiconductor |
20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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Analog Power |
N-Channel MOSFET |
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Aosong |
Digital temperature and humidity sensor |
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AXElite |
P-Channel Enhancement Mode MOSFET |
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AiT Semiconductor |
-20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Analog Power |
P-Channel MOSFET |
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Analog Power |
P-Channel 20-V (D-S) MOSFET |
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Aosong |
Digital temperature and humidity sensor |
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AXElite |
N-Channel Enhancement Mode MOSFET |
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ETC |
Digital relative humidity & temperature emperature sensor |
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Analog Power |
N-Channel 20-V (D-S) MOSFET |
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Analog Power |
N-Channel MOSFET |
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Aosong |
Digital-output relative humidity & temperature sensor/module |
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