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HN4D02JU
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HN4D02JU Silicon Epitaxial Planar Type Diode

Document Datasheet DataSheet (230.75KB)

HN4D02JU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications  Low forward voltage : VF (3) = 0.90V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance : CT = 0.9pF (typ.) HN4D02JU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Ch.

Features

rrent/voltage, etc.) are within the absolute maximum JEITA ratings. Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA ― 2-2L1S Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual Weight: 0.0062 g (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating; Total rating = unit rating × 1.5 ** :Total rating Electrical Characteristics (Q1, Q2, Q3, Q4 COMMON,Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF.

HN4D02JU HN4D02JU HN4D02JU
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