HN4B01JE Silicon NPN/PNP Epitaxial Type Transistor

HN4B01JE Silicon NPN/PNP Epitaxial Type Transistor

HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE.

Features

-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −50 −50 −5 −150 −30 Unit 52 V V V mA Equivalent Circuit (Top View) mA 5 4 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Q1 Q2 Characteristic Symbol Rating Unit Collector power dissipation Junction temperature PC* 100 mW Tj 150 °C 123 Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to dec.