BDW94B Silicon PNP Power Transistor

BDW94B Silicon PNP Power Transistor

• Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(Min)- BDW94C • Complement to Type BDW93/A/B/C APPLICATIONS • Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) .

Features

j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT
•c/w Quality Semi-Conductors r i'ii 12 3 -vw — l-wv — I — * R' 12 -3 "H 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package r , rJTL, jlUl^t A / MOOV *1 */* soi'. . ^j"*~L K , H G *- R|*- V tc ! j mm DIM MIN MAX A 15.70 15.90 B 9.90 10.10 C 4.20 4.40 D 0.70 0.90 F 3.40 3.60 0 4.98 5.18 H 2.70 2.90 J 0.44 0.46 K 13.20 13.40 I 1.10 1.30 Q 2.70 2.90 R 2.50 2.70 S 1.29 1.31 U 6.45 6.65 V 8.66 8.86 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified SYMBOL PARAMETER BDW94 CONDITI.