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RN2708JE |
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| Part Number | RN2708JE |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN2707JE~RN2709JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2707JE, RN2708JE, RN2709JE Switching, Inverter Circuit, Interface Circuit and Drive... |
| Features |
9JE
−15
Collector current
IC
−100
mA
Collector power dissipation RN2707JE PC (Note 1)
100
mW
Junction temperature
to 2709JE
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
1.BASE1
(B1)
2.EMITTER (E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2P1D
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
5
4
Q1
Q2
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signific... |
| Document |
 RN2708JE Data Sheet
PDF 335.17KB |
| Distributor | Stock | Price | Buy |
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