RN2708 Silicon PNP Epitaxial Type Transistor

RN2708 Silicon PNP Epitaxial Type Transistor

RN2707 to RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in USV (ultra super mini type with 5 leads)  With built-in b.

Features

e Collector current Collector power dissipation Junction temperature Storage temperature range RN2707 to 2709 RN2707 RN2708 RN2709 RN2707 to 2709 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −6 −7 V −15 −100 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pl.