RN2707 |
|
Part Number | RN2707 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | RN2707 to RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Switching, Inverter Circuit, Interface Circuit and Driver Circ... |
Features |
e
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2707 to 2709 RN2707 RN2708 RN2709
RN2707 to 2709
VCBO VCEO
VEBO
IC PC* Tj Tstg
−50
V
−50
V
−6
−7
V
−15
−100
mA
200
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Pl... |
Datasheet |
RN2707 Data Sheet
PDF 488.12KB |
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No. | Part # | Manufacture | Description | Datasheet |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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Toshiba |
Silicon PNP Epitaxial Type Transistor |
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