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RN2116MFV Silicon PNP Epitaxial Type Transistors

RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ul.

Features

N2114MFV VCBO −50 V to Collector-emitter voltage RN2118MFV VCEO −50 V RN2114MFV −5 Emitter-base voltage RN2115MFV −6 RN2116MFV VEBO −7 V RN2117MFV −15 RN2118MFV −25 Collector current IC −100 mA Collector power dissipation RN2114MFV PC(Note1) 150 mW to Junction temperature RN2118MFV Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even .

No.	Part #	Manufacture	Description
1	RN2116	Toshiba	Silicon PNP Epitaxial Type Transistors
2	RN2110	Toshiba	Silicon PNP Epitaxial Type Transistors
3	RN2110MFV	Toshiba	Silicon PNP Epitaxial Type Transistors
4	RN2111	Toshiba	Silicon PNP Epitaxial Type Transistors
5	RN2111MFV	Toshiba	Silicon PNP Epitaxial Type Transistors
6	RN2112	Toshiba	Silicon PNP Epitaxial Type Transistors
7	RN2112MFV	Toshiba	Silicon PNP Epitaxial Type Transistors
8	RN2113	Toshiba	Silicon PNP Epitaxial Type Transistors
9	RN2113MFV	Toshiba	Silicon PNP Epitaxial Type Transistors
10	RN2114	Toshiba	Silicon PNP Epitaxial Type Transistors
11	RN2114MFV	Toshiba	Silicon PNP Epitaxial Type Transistors
12	RN2115	Toshiba	Silicon PNP Epitaxial Type Transistors
13	RN2115MFV	Toshiba	Silicon PNP Epitaxial Type Transistors
14	RN2117	Toshiba	Silicon PNP Epitaxial Type Transistors
15	RN2117MFV	Toshiba	Silicon PNP Epitaxial Type Transistors

RN2116MFV Silicon PNP Epitaxial Type Transistors

RN2116MFV Silicon PNP Epitaxial Type Transistors

Features

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