HN1B01FU |
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| Part Number | HN1B01FU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Bipolar Transistors Silicon PNP/NPN Epitaxial Type HN1B01FU 1. Applications • Low-Frequency Amplifiers 2. Q1 Features (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) ... |
| Features |
(1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)
3. Q2 Features
(1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
4. Q1, Q2 Common Features
(1) AEC-Q101 qualified (Please see the orderable part number list)
5. Packaging and Internal Circuit
HN1B01FU
US6
1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1
... |
| Datasheet |
 HN1B01FU Data Sheet
PDF 597.33KB |
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