P4B60HP2F Datasheet

P4B60HP2F Power MOSFET

P4B60HP2F Power MOSFETs 600V, 4A, N-channel Feature N-channel SMD High Voltage High Speed Low Capacitance High Avalanche Durability, High di/dt Durability Pb free terminal RoHS:Yes OUTLINE Package (House Name): FB Package (JEDEC Code): TO-252AA Equivalent circuit Absolute Maximum Ratings (unless .

Features

V V A A A W A mJ mJ A/μs P4B60HP2F_Rev.04(2022.06) Electrical Characteristics (unless otherwise specified : Tc=25℃) Item Symbol Conditions Drain-Source breakdown voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Static drain-source on-state resistance Gate threshold voltage Source-drain diode forward voltage Thermal resistance Total gate charge Input capacitance Reverce transfer capacitnce Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode reverse recovery time V(BR)DSS ID=1mA, VGS=0V IDSS VDS=600V, VGS=0V IGS.