RN1704 Datasheet (PDF), Stock and Price, Toshiba Transistors, Distributor

RN1704 Silicon NPN Epitaxial Type Transistors

RN1701 to RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1701, RN1702, RN1703 RN1704, RN1705, RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit  Including two devices in USV (ultra super mini type with 5 leads.

Features

ng Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1701 to 1706 RN1701 to 1704 RN1705, 1706 RN1701 to 1706 VCBO VCEO VEBO IC PC* Tj Tstg 50 V 50 V 10 V 5 100 mA 200 mW 150 °C −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe.

No.	Part #	Manufacture	Description
1	RN1701	Toshiba	Silicon NPN Epitaxial Type Transistors
2	RN1701JE	Toshiba	Silicon NPN Epitaxial Type Transistors
3	RN1702	Toshiba	Silicon NPN Epitaxial Type Transistors
4	RN1702JE	Toshiba	Silicon NPN Epitaxial Type Transistors
5	RN1703	Toshiba	Silicon NPN Epitaxial Type Transistors
6	RN1703JE	Toshiba	Silicon NPN Epitaxial Type Transistors
7	RN1704JE	Toshiba	Silicon NPN Epitaxial Type Transistors
8	RN1705	Toshiba	Silicon NPN Epitaxial Type Transistors
9	RN1705JE	Toshiba	Silicon NPN Epitaxial Type Transistors
10	RN1706	Toshiba	Silicon NPN Epitaxial Type Transistors
11	RN1706JE	Toshiba	Silicon NPN Epitaxial Type Transistors
12	RN1707	Toshiba	Silicon NPN Epitaxial Type Transistors
13	RN1707JE	Toshiba	Silicon NPN Epitaxial Type Transistors
14	RN1708	Toshiba	Silicon NPN Epitaxial Type Transistors
15	RN1708JE	Toshiba	Silicon NPN Epitaxial Type Transistors

RN1704 Silicon NPN Epitaxial Type Transistors

RN1704 Silicon NPN Epitaxial Type Transistors

Features

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