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RN1704JE
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RN1704JE Silicon NPN Epitaxial Type Transistors

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RN1704JE Silicon NPN Epitaxial Type Transistors

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into a.

Features

(Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN1701JE to 1706JE Emitter-base voltage RN1701JE to 1704JE RN1705JE RN1706JE Collector current Collector power dissipation RN1701JE Junction temperature to 1706JE Storage temperature range Symbol Rating Unit VCBO VCEO 50 V 50 V VEBO 10 V 5 IC 100 mA PC (Note 1) 100 mW Tj 150 °C Tstg −55 to 150 °C Equivalent Circuit (top view) 5 4 Q1 Q2 123 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in tempera.

RN1704JE RN1704JE RN1704JE
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