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 DataSheet (728.52KB)
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RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable .
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 ©2021-202.
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | RN2105 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
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| 2 | RN2101 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
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| 3 | RN2101MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
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| 4 | RN2102 |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
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| 5 | RN2102MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |
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