IMWH170R650M1 Infineon 1700V SiC Trench MOSFET Datasheet. Stock, Price

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IMWH170R650M1

Infineon
IMWH170R650M1
IMWH170R650M1 IMWH170R650M1
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Part Number IMWH170R650M1
Manufacturer Infineon (https://www.infineon.com/)
Description 1 – gate 2 – drain 3 – source TO-247 HCC – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R650M1 Package PG-TO247-3-STD-NN4.8 Marking 170M1650 Datasheet www.infineon.com Please ...
Features
• VDSS = 1700 V at Tvj = 25°C
• IDDC = 7.5 A at TC = 25°C
• RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C
• Optimized for fly-back topologies
• 12 V / 0 V gate-source voltage compatible with most fly-back controllers
• Very low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Fully controllable dv/dt for EMI optimization
• .XT interconnection technology for best-in-class thermal performance Potential applications
• General purpose drives (GPD)
• EV-Charging
• Energy Storage Systems (ESS)
• String inverter
• Uninterruptible power supplies Product validation
• Qualified for in...

Document Datasheet IMWH170R650M1 Data Sheet
PDF 1.25MB


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