IGT65R055D2 |
|
Click to view a larger image
| Part Number | IGT65R055D2 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | . . . . . . . . 1 Maximum ratings... |
| Features |
• Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency • Improves power density • Enables highest operating frequency • System cost reduction savings • Reduces EMI Potential applications Industrial, telecom, datacenter SMPS, charger and adapter based on half‑bridge topologies (half‑bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). Pro... |
| Document |
 IGT65R055D2 Data Sheet
PDF 1.41MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Infineon |
Power Transistor |
|
|
|
|
Infineon |
Power Transistor |
|
|
|
|
Infineon |
Power Transistor |
|
|
|
|
Infineon |
Power Transistor |
|
|
|
|
Infineon |
Power Transistor |
|
|
|
|
Infineon |
600V enhancement-mode Power Transistor |
|
|
|
|
Infineon |
Power Transistor |
|
|
|
|
Infineon |
600V enhancement-mode Power Transistor |
|
|
|
|
GE |
Insulated Gate Bipolar Transistor |
|
|
|
|
GE |
Insulated Gate Bipolar Transistor |
|