AOW190A60C |
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| Part Number | AOW190A60C |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, ... |
| Features |
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
±30
20*
20
12*
12
80
5
12.5
410 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
27
208
0.22
1.66
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
-55 to 150 300
Units V V V
A
A mJ mJ V/ns W W/°C °C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RqJA RqCS
Maximum Junction... |
| Datasheet |
 AOW190A60C Data Sheet
PDF 464.80KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
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Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
Power Transistor |
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INCHANGE |
N-Channel MOSFET |
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